Chemical reactions of electroless etching

Hshimoto M. has, in 2005 published several papers on LED manufacture with deposition of GaN. Im not aware of the part that the alcohol nd peroxide mix plays (except making n epoxide ?) since its usually a 3 or 4 prt process where the HF is used to dissolve the remaining Silica from your substrate.

You don't have any business working Chemistry if you don't understand it.

sounds more like an art project , but if hes ******* with HF might I say that this acid is one of the most dangerous of the ones we use in industry

Echo...among other things.

FYI, i'm doing etching process to fabricate porous on the surface of GaN. Before, I'm doing etching process to fabricate porous silicon. Yes, the HF is used to dissolve the surface of the the silicon while the alcohol and peroxide are used for reducing bubble formation and smoothing the sidewalls of the porous structure, respectively. I already get the chemical reactions between silicon and the solution. However, for GaN sample its quite challenging since there are two element involve (Ga & N) in this reactions.

would you start the dep of the GaN by uing a Gallium Azide? Im just kibitzing here Ive never messed with gallium anything except in its separation with Iridium. (All my past RE work has been with ores and slags).
Are you making colored light LED signs?